Title :
Radiation-induced degradation of ohmic contacts
Author :
Blundell, R. ; Morgan, D.V. ; Howes, M.J.
Author_Institution :
University of Leeds, Department of Electrical & Electronic Engineering, Leeds, UK
Abstract :
Ohmic contacts can be severely degraded by the introduction of small amounts of radiation damage at the metal-semiconductor interface. This can lead to failure of GaAs transferred-electron devices; a safe limit for proton bombardment of ohmic contacts is proposed.
Keywords :
Gunn devices; ohmic contacts; proton effects; ohmic contact degradation; proton bombardment; radiation damage; transferred electron devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770349
