Title :
Small-area, high-radiance c.w. InGaAsP l.e.d.s emitting at 1.2 to 1.3 μm
Author :
Dentai, A.G. ; Lee, T.P. ; Burrus, C.A. ; Buehler, E.
Author_Institution :
Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
Double-heterostructure InP/lnGaAsP/lnP high-radiance l.e.d.s have been fabricated by liquid-phase epitaxy on the <IIIB> face of commercially available InP substrates. The best small-area l.e.d.s had a useful external power efficiency of 1.5% and a 900 Å-wide emission spectrum centred at 1.23 μm. emitting ~3 mW into the air at 100 mA and 2 V; essentially similar results were obtained with devices operating al 1.30 μm.
Keywords :
indium compounds; light emitting diodes; InGaAsP LEDs; double heterostructure InP/InGaAsP/InP LEDs; external power efficiency; high-radiance CW; liquid phase epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770350
