• DocumentCode
    942309
  • Title

    Superconducting contacts to a two-dimensional electron gas in GaAs/AlGaAs-heterostructures

  • Author

    Lenssen, K.-M.H. ; Matters, M. ; Harmans, C.J.P.M. ; Mooij, J.E. ; Leys, M.R. ; van der Vleuten, W. ; Wolter, J.H.

  • Author_Institution
    Dept. of Appl. Phys., Delft Univ. of Technol., Netherlands
  • Volume
    3
  • Issue
    1
  • fYear
    1993
  • fDate
    3/1/1993 12:00:00 AM
  • Firstpage
    1961
  • Lastpage
    1963
  • Abstract
    The process of Sn/Ti-diffusion is shown to provide low-resistance (highly transmissive) contacts to the two-dimensional electron gas (2DEG) in GaAs/AlGaAs-heterostructures. At temperatures down to 80 mK the resistance stays very low. The temperature and gate-voltage dependence of the dV/dl-V-curves shows that Andreev reflection must take place in the sample. The measurements suggest that Ti is the relevant superconductor and not Sn. The fact that the bottom of the low-resistance region is very flat and does not show a peak near V=0 V means that the transmission of the NS (normal metal-superconductor) interface is very close to 1. Therefore these superconducting contacts seem to be very suitable for studying SNS (superconductor-normal metal-superconductor) junctions in the clean limit.<>
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; superconducting junction devices; two-dimensional electron gas; 2DEG; Andreev reflection; GaAs-AlGaAs; GaAs/AlGaAs-heterostructures; NS interface; SNS junctions; Sn contact; Ti contact; clean limit; gate-voltage dependence; low resistance contacts; normal metal superconductor interface; resistance; superconducting contacts; temperature dependence; transmission; two-dimensional electron gas; Charge carrier processes; Electrical resistance measurement; Electrodes; Electrons; FETs; Gallium arsenide; Inorganic materials; Physics; Superconducting devices; Superconducting materials;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/77.233575
  • Filename
    233575