• DocumentCode
    942344
  • Title

    High-Speed and Low-Power GaAs Phase Frequency Comparator

  • Author

    Osafune, Kazuo ; Ohwada, Kuniki ; Kato, Naoki

  • Volume
    34
  • Issue
    1
  • fYear
    1986
  • fDate
    1/1/1986 12:00:00 AM
  • Firstpage
    142
  • Lastpage
    146
  • Abstract
    A high-speed and low-power consumption phase frequency comparator (PFC) for a phase lock stable oscillator was designed and fabricated with a GaAs MESFET BFL circuit for the first time. The threshold voltage, gate width, and gate length of GaAs MESFET´s in the PFC were determined by circuit simulations for a high-speed and low-power operation. The fabrication process used buried p-layer SAINT-FET´s with 0.5-µm gate length. The fabricated PFC performed stable phase and frequency comparison up to 600 MHz at only 60 mW. Using dislocation-free wafers, the fabrication yield in the laboratory was more than 90 percent.
  • Keywords
    Circuit simulation; FETs; Fabrication; Frequency conversion; Gallium arsenide; Local oscillators; MESFET circuits; Semiconductor diodes; Threshold voltage; Voltage-controlled oscillators;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.1986.1133291
  • Filename
    1133291