Title :
Trap effects in p-channel GaAs MESFET´s
Author :
Peng, Lan L. ; Canfield, Philip C. ; Allstot, David J.
Author_Institution :
Samsung Semiconductor, Inc., San Jose, CA, USA
fDate :
11/1/1992 12:00:00 AM
Abstract :
After processing of conventional n-channel GaAs MESFETs, traps in the channel and channel interface regions cause several deleterious parasitic device effects. It is known that a p-well GaAs MESFET structure eliminates all of the undesirable parasitic effects in n-channel devices; moreover, complementary p-channel MESFETs are realizable with the same p-well technology. The hole capture and emission processes of deep-level traps associated with p-channel GaAs MESFETs are characterized here using temperature-dependent drain current transient measurements. The transient behavior is dominated by trapping in the channel-substrate interface region analogous to an n-channel MESFET. By employing a one-level model to extract the activation energy and capture cross section, the traps in the channel-substrate region of the p-channel MESFET are attributed to an EL2 antisite defect (AsGa )
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; hole traps; interface electron states; semiconductor device models; EL2 antisite defect; GaAs; MESFET structure; activation energy; capture cross section; channel interface regions; channel-substrate interface; complementary MESFETs; deep-level traps; deleterious parasitic device effects; hole capture; n-channel devices; one-level model; p-channel MESFETs; p-well technology; semiconductors; temperature-dependent drain current transient measurements; transient behavior; CMOS technology; Crystalline materials; Frequency; Gallium arsenide; Integrated circuit technology; MESFETs; Microwave devices; Microwave technology; Rendering (computer graphics); Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
