• DocumentCode
    942407
  • Title

    Contact-degradation studies on GaAs transferred-electron devices using a focused backscattering technique

  • Author

    Palmstr¿¿m, C.J. ; Morgan, D.V. ; Howes, M.J.

  • Author_Institution
    University of Leeds, Department of Electrical & Electronic Engineering, Leeds, UK
  • Volume
    13
  • Issue
    17
  • fYear
    1977
  • Firstpage
    504
  • Lastpage
    505
  • Abstract
    Focused backscattering microanalysis has been used to overcome some of the problems associated with conventional backscattering. The small beam size enables the study of (a) small areas typical of real microwave devices, (b) lateral variations of the contact interdiffusion and (c) deep profiles when used in conjunction with angle lapped samples.
  • Keywords
    Gunn devices; III-V semiconductors; metallisation; ohmic contacts; particle backscattering; solid-state microwave devices; GaAs transferred electron devices; Gunn devices; angle lapped samples; contact degradation; contact interdiffusion; deep profiles; focused backscattering technique;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770368
  • Filename
    4240496
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=942407