• DocumentCode
    942426
  • Title

    Modelling the 3rd-order intermodulation-distortion properties of a GaAs f.e.t.

  • Author

    Tucker, Rodney ; Rauscher, C.

  • Author_Institution
    Cornell University, School of Electrical Engineering, Ithaca, USA
  • Volume
    13
  • Issue
    17
  • fYear
    1977
  • Firstpage
    508
  • Lastpage
    510
  • Abstract
    A simple analytical model of the 3rd-order intermodulation-distortion properties of a GaAs field-effect transistor is proposed. The model takes into account the distortion-producing nonlinearities of the Schottky-bairier junction, the trans-conductance and the drain conductance. Parameters of the model are presented for a GaAs f.e.t. of 0.5 ¿m gate length, and the model-predicted distortion characteristics are compared with measured data.
  • Keywords
    Schottky gate field effect transistors; electric distortion; intermodulation; 3rd order intermodulation distortion properties; analytical model;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770370
  • Filename
    4240498
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=942426