Impact of interface impurities on heterostructure field-effect transistors

Author

Reynolds, C.L., Jr. ; Vuong, T. Hong Ha ; Peticolas, Larry J.

Author_Institution

AT&T Bell Labs., Reading, PA, USA

Volume

39

Issue

11

fYear

1992

fDate

11/1/1992 12:00:00 AM

Firstpage

2459

Lastpage

2464

Abstract

The influence of C and Si impurities at the substrate/epitaxy interface on the threshold voltage of GaAs/AlGaAs selectively doped heterostructure transistors has been investigated both experimentally and theoretically using a one-dimensional simulation. The presence of C raises the conduction band relative to the Fermi level and reduces the electron density in the channel. This results in a positive shift of the depletion-mode (DFET) threshold voltage as the interfacial C concentration increases. For low C concentrations the DFET threshold voltage decreases with increasing Si at the interface. The impact of interfacial C and Si is small on the enhancement-mode (EFET) threshold voltage

Keywords

III-V semiconductors; aluminium compounds; carbon; gallium arsenide; high electron mobility transistors; semiconductor doping; silicon; DFET; EFET; Fermi level; GaAs-AlGaAs; GaAs:C; GaAs:Si; HEMT; SDHT; conduction band; depletion mode FET; electron density; enhancement mode FET; heterostructure field-effect transistors; interface impurities; selectively doped heterostructure transistors; semiconductors; substrate/epitaxy interface; threshold voltage shift; Contamination; Epitaxial growth; FETs; Gallium arsenide; HEMTs; Impurities; MODFETs; Molecular beam epitaxial growth; Substrates; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.163458

Filename

163458