DocumentCode
942699
Title
Simplified GaAs m.e.s.f.e.t. model to 10 GHz
Author
Minasian, Robert A.
Author_Institution
University of Melbourne, Department of Electrical Engineering, Parkville, Australia
Volume
13
Issue
18
fYear
1977
Firstpage
549
Lastpage
551
Abstract
A simplified design-oriented equivalent circuit for the GaAs m.e.s.f.e.t. is presented. Its relation to a common, but more complex, model is derived and characteristics are compared. Element values are easily determined from measurements, and the simple model shows good agreement with measured parameters to 10 GHz for 1 ¿m-gate m.e.s.f.e.t.s.
Keywords
Schottky gate field effect transistors; equivalent circuits; semiconductor device models; solid-state microwave devices; 10 GHz; GaAs MESFET model; equivalent circuit;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19770395
Filename
4240526
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