Narrow channel 2-D MESFET for low power electronics

Author

Peatman, William C B ; Hurt, Michael J. ; Park, Hyunchang ; Ytterdal, Trond ; Tsai, Roger ; Shur, Michael S.

Author_Institution

Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA

Volume

42

Issue

9

fYear

1995

fDate

9/1/1995 12:00:00 AM

Firstpage

1569

Lastpage

1573

Abstract

A 2-D MESFET utilizing sidewall Schottky contacts on either side of a very narrow 2-d electron gas channel is described. Record transconductance of 295 and 130 mS/mm have been achieved at room temperature in 1.0 and 0.5 micron wide devices, respectively. We also present accurate 2-D MESFET current-voltage and capacitance-voltage models. These models have been implemented into AIM-Spice which was used to simulate DCFL inverter and ring oscillator circuits. The ring oscillator simulations predict a power-delay product of less than 0.1 fJ/gate at room temperature, suggesting that the 2-D MESFET may be useful for ultra low power electronics applications

Keywords

MESFET integrated circuits; SPICE; Schottky gate field effect transistors; direct coupled FET logic; field effect logic circuits; logic gates; semiconductor device models; 0.5 micron; 1.0 micron; 2D electron gas; AIM-Spice; DCFL inverter; capacitance-voltage models; current-voltage models; low power electronics; narrow channel 2D MESFET; power-delay product; ring oscillator; sidewall Schottky contacts; simulation; transconductance; Capacitance-voltage characteristics; Circuit simulation; Electrons; Inverters; Low power electronics; MESFETs; Ring oscillators; Schottky barriers; Temperature; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.405269

Filename

405269