Title :
Electrical properties of thermal oxides on GaAs
Author :
Butcher, D.N. ; Sealy, B.J.
Author_Institution :
University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
Abstract :
The growth and electrical properties of oxides grown on GaAs at 510°C have been studied. Results show that growth with time follows a parabolic law and that electrical properties are, in general, very different from those of oxides grown anodically.
Keywords :
III-V semiconductors; electronic conduction in insulating thin films; gallium arsenide; insulating thin films; GaAs; electrical properties; oxidation; thermal oxides; thin films;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770400
