Title :
Microwave triode amplifiers from 1 to 2 GHz using molybdenum thin-film-field-emission cathode devices
Author :
Phillips, Purobi M. ; Neidert, Robert E. ; Malsawma, Lex ; Hor, Charles
Author_Institution :
Sci. Applications Int. Corp., McLean, VA, USA
fDate :
9/1/1995 12:00:00 AM
Abstract :
Experimental results are presented on microwave amplifiers using Molybdenum Thin Film-Field-Emission cathode devices, fabricated at Stanford Research Institute (SRT). A device having 250 tips, operating at 4.8 mA of current with gm=840 μS is inferred to have an intrinsic power gain of 7 dB at 1.1 GHz. Other results are given for frequencies up to 1.7 GHz. For the first time, device and circuit modeling of sufficient accuracy has been performed that it is possible to confidently deduce the intrinsic performance parameters of the FE devices. The importance of integrated matching circuits for optimum power gain performance is exposed and quantified
Keywords :
cathodes; electron field emission; microwave amplifiers; microwave tubes; molybdenum; thin film devices; triodes; vacuum microelectronics; 1 to 2 GHz; 4.8 mA; 7.8 dB; 840 muS; Mo; circuit modeling; device modeling; integrated matching circuits; microwave triode amplifiers; molybdenum thin-film-field-emission cathode devices; power gain; Cathodes; Fabrication; Microwave amplifiers; Microwave devices; Radio frequency; Radiofrequency amplifiers; Solid state circuits; Testing; Vacuum technology; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
