Title :
InP-Langmuir-film m.i.s. structures
Author :
Roberts, G.G. ; Pande, K.P. ; Barlow, W.A.
Author_Institution :
University of Durham, Department of Applied Physics & Electronics, Durham, UK
Abstract :
The electrical properties of m.i.s. structures based on InP and Langmuir films have been investigated. A strongly inverted low-frequency-type C/V response occurs at about 30 Hz. Surface-state distributions have been evaluated by using both quasistatic and conductance techniques. Effective surface-state densities are found to be ~3 × 1011cm¿2 eV¿1 over a large fraction of the band gap.
Keywords :
III-V semiconductors; Langmuir films; capacitance; indium compounds; metal-insulator-semiconductor devices; surface electron states; C/V response; InP; Langmuir films; MIS structures; conductance techniques; quasistatic; surface state density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770415
