• DocumentCode
    942900
  • Title

    InP-Langmuir-film m.i.s. structures

  • Author

    Roberts, G.G. ; Pande, K.P. ; Barlow, W.A.

  • Author_Institution
    University of Durham, Department of Applied Physics & Electronics, Durham, UK
  • Volume
    13
  • Issue
    19
  • fYear
    1977
  • Firstpage
    581
  • Lastpage
    583
  • Abstract
    The electrical properties of m.i.s. structures based on InP and Langmuir films have been investigated. A strongly inverted low-frequency-type C/V response occurs at about 30 Hz. Surface-state distributions have been evaluated by using both quasistatic and conductance techniques. Effective surface-state densities are found to be ~3 × 1011cm¿2 eV¿1 over a large fraction of the band gap.
  • Keywords
    III-V semiconductors; Langmuir films; capacitance; indium compounds; metal-insulator-semiconductor devices; surface electron states; C/V response; InP; Langmuir films; MIS structures; conductance techniques; quasistatic; surface state density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770415
  • Filename
    4240551
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=942900