• DocumentCode
    942923
  • Title

    Opposite-channel-based charge injection in SOI MOSFET´s under hot carrier stress

  • Author

    Zaleski, Andrzej ; Sinha, Shankar P. ; Ioannou, Dimitris E. ; Campisi, George J. ; Hughes, Harold L.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA
  • Volume
    42
  • Issue
    9
  • fYear
    1995
  • fDate
    9/1/1995 12:00:00 AM
  • Firstpage
    1697
  • Lastpage
    1700
  • Abstract
    By operating one channel of a typical SOI MOSFET in avalanche while keeping the opposite channel accumulated, charge injection into the opposite gate takes place. Three independent experiments are described that demonstrate the occurrence of this opposite-channel based charge injection. The experimental results are in agreement with PISCES numerical simulations
  • Keywords
    MOSFET; hot carriers; silicon-on-insulator; PISCES numerical simulations; SOI MOSFET; Si; accumulated mode; avalanche mode; hot carrier stress; opposite-channel-based charge injection; Frequency conversion; Frequency measurement; Hot carriers; MODFET circuits; MOSFET circuits; Numerical simulation; Optical amplifiers; Packaging; Solid state circuits; Stress;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.405288
  • Filename
    405288
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=942923