Title :
Opposite-channel-based charge injection in SOI MOSFET´s under hot carrier stress
Author :
Zaleski, Andrzej ; Sinha, Shankar P. ; Ioannou, Dimitris E. ; Campisi, George J. ; Hughes, Harold L.
Author_Institution :
Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA
fDate :
9/1/1995 12:00:00 AM
Abstract :
By operating one channel of a typical SOI MOSFET in avalanche while keeping the opposite channel accumulated, charge injection into the opposite gate takes place. Three independent experiments are described that demonstrate the occurrence of this opposite-channel based charge injection. The experimental results are in agreement with PISCES numerical simulations
Keywords :
MOSFET; hot carriers; silicon-on-insulator; PISCES numerical simulations; SOI MOSFET; Si; accumulated mode; avalanche mode; hot carrier stress; opposite-channel-based charge injection; Frequency conversion; Frequency measurement; Hot carriers; MODFET circuits; MOSFET circuits; Numerical simulation; Optical amplifiers; Packaging; Solid state circuits; Stress;
Journal_Title :
Electron Devices, IEEE Transactions on
