Title :
Large area GaInAsP solar cells grown by gas-source MBE on GaAs substrates
Author :
Smekalin, K. ; Tappura, K. ; Lammasniemi, J.
Author_Institution :
Dept. of Phys., Tampere Univ. of Technol., Finland
fDate :
9/1/1995 12:00:00 AM
Abstract :
Large area (1×1 cm2) Ga0.84In0.18 As0.68P0.32 solar cells with a band-gap of 1.50 eV were grown by gas-source MBE on GaAs substrates. Both n-on-p and p-on-n structures were fabricated and studied. The n-on-p cells showed significantly better total area conversion efficiencies (14.3% at AMO, 1-sun, with 20% of grid obscuration) than p-on-n structures (10.5%, same conditions) due to longer minority carrier lifetimes in the p-type base and heavily doped n-type emitter layers
Keywords :
III-V semiconductors; carrier lifetime; energy gap; gallium arsenide; gallium compounds; heavily doped semiconductors; indium compounds; minority carriers; molecular beam epitaxial growth; semiconductor growth; solar cells; 1.5 eV; 10.5 percent; 14.3 percent; Ga0.84In0.18As0.68P0.32 ; GaAs; GaAs substrates; GaInAsP solar cells; gas-source MBE; heavily doped n-type emitter layers; large area solar cells; minority carrier lifetimes; n-on-p structures; p-on-n structures; p-type base; total area conversion efficiencies; Electron devices; Gallium arsenide; Impact ionization; Indium phosphide; Molecular beam epitaxial growth; Photonic band gap; Photovoltaic cells; Semiconductor materials; Silicon on insulator technology; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
