Zero-temperature-coefficient biasing point of partially depleted SOI MOSFET´s

Author

Osman, Ashraf A. ; Osman, Mohamed A. ; Dogan, Numan S. ; Imam, Mohamed A.

Author_Institution

Dept. of Electr. & Comput. Eng., Washington State Univ., Pullman, WA, USA

Volume

42

Issue

9

fYear

1995

fDate

9/1/1995 12:00:00 AM

Firstpage

1709

Lastpage

1711

Abstract

Experimental and analytical results of the front gate bias (V_GS) and the drain current (I_DS) with the drain voltage (V_DS) of partially depleted (PD) SOI MOSFET at the Zero-Temperature-Coefficient (ZTC) point over a very wide temperature range (25-300°C) are presented. Two distinct ZTC points are identified, one in the linear region and the other is in the saturation region. Additionally, the analysis takes into consideration the body effects, and mobility degradation with applied front gate bias. The analysis results are in excellent agreement with the experimental results

Keywords

MOSFET; carrier mobility; silicon-on-insulator; 25 to 300 C; Si; body effects; drain current; drain voltage; front gate bias; linear region; mobility degradation; partially depleted SOI MOSFET; saturation region; zero-temperature-coefficient biasing point; Application specific integrated circuits; CMOS technology; Degradation; Intrusion detection; Leakage current; MOSFET circuits; Temperature dependence; Temperature distribution; Temperature sensors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.405293

Filename

405293