DocumentCode
943053
Title
Two-Josephson-junction interferometer memory cell for n.d.r.o.
Author
Beha, H.
Author_Institution
Universitÿt Karlsrÿhe, Institut fÿr Elektrotechnische Grundlagen der Informatik, Karlsrÿhe, West Germany
Volume
13
Issue
20
fYear
1977
Firstpage
596
Lastpage
598
Abstract
A single-flux-quantum random-access memory cell for nondestructive read-out and write has been designed and successfully simulated. The binary information is stored in an interferometer with two unequal Josephson junctions. No bias current is needed to store the information. Reasonable operation margins are obtained.
Keywords
nondestructive readout; random-access storage; superconducting junction devices; Josephson junction interferometer memory cell; NDRO; RAM; nondestructive readout; single flux quantum random access memory cell;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19770429
Filename
4240570
Link To Document