Title :
Effect of the reverse bias between channel and substrate on the effective mobility of electrons in a Ge i.g.f.e.t.
Author :
Kvon Ze Don ; Neizvestny, G. ; Ovsuyk, V.N.
Author_Institution :
Academy of Sciences of the USSR, Siberian Branch, Institute of Semiconductor Physics, Novosibirsk, USSR
Abstract :
An analysis of the behaviour of the electron effective mobility under reverse bias between the channel and substrate in a germanium i.g.f.e.t. is presented. It is shown that the experimentally observed decrease in the effective mobility of the electrons in the channel is mainly caused by the decrease in the electron drift mobility in the channel, rather than by surface-state capture.
Keywords :
carrier mobility; germanium; insulated gate field effect transistors; Ge IGFET; channel; electron drift mobility; electron effective mobility; insulated gate field effect transistor; reverse bias;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770447
