Study of the Gate-Sensing and Channel-Sensing Transient Analysis Method for Monitoring the Charge Vertical Location of SONOS-Type Devices

Author

Pei-Ying Du ; Hang-Ting Lue ; Szu-Yu Wang ; Erh-Kun Lai ; Tiao-Yuan Huang ; Kuang-Yeu Hsieh ; Liu, Richard ; Chih-Yuan Lu ; Pei-Ying Du

Volume

7

Issue

3

fYear

2007

Firstpage

407

Lastpage

419

Abstract

The gate-sensing and channel-sensing transient analysis method is studied in detail. This method introduces an additional gate-sensing capacitor to be compared with the conventional channel-sensing one. Sensing in both modes provides two equations that are suitable to solve for two variables-the charge density (Q ) and the average charge vertical location (x ). In this paper, the principle of this method is discussed in detail. Several factors that affect the measurement accuracy are also analyzed. The power of this method is demonstrated by program/erase cycling and data retention tests. This method is indeed a powerful tool for detailed understanding of trapping dynamics.

Keywords

capacitors; field effect memory circuits; flash memories; semiconductor-insulator-semiconductor structures; transient analysis; Flash memory; SONOS-type devices; channel-sensing transient analysis method; charge density; charge vertical location; data retention tests; gate-sensing capacitor; gate-sensing transient analysis method; program/erase cycling; silicon-oxide-nitride-oxide-silicon devices; trapping dynamics; Charge density; SONOS; charge density; silicon–oxide–nitride–oxide–silicon (SONOS); transient analysis; trapping dynamics; vertical location;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2007.907290

Filename

4358687