Title :
Octave-band GaAs f.e.t. y.i.g.-tuned oscillators
Author_Institution :
Watkins-Johnson Company, Palo Alto, USA
Abstract :
The design of a y.i.g.-tuned f.e.t. oscillator that covers the X-band octave of 6 to 12 GHz is presented. The oscillator uses a compound feedback scheme to generate a negative conductance over the required bandwidth. Excellent agreement is obtained between the computer predictions and the experimental results.
Keywords :
field effect transistor circuits; microwave oscillators; solid-state microwave circuits; GaAs; YIG tuned FET oscillator; compound feedback scheme; negative conductance; octave band;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770450
