• DocumentCode
    943289
  • Title

    An Innovative Understanding of Metal–Insulator–Metal (MIM)-Capacitor Degradation Under Constant-Current Stress

  • Author

    Hung, Chi-Chao ; Oates, Anthony S. ; Lin, Horng-Chih ; Chang, Yu-En Percy ; Wang, Jia-Lian ; Huang, Cheng-Chung ; Yau, You-Wen

  • Author_Institution
    Taiwan Semicond. Manuf. Co. Ltd., Hsinchu
  • Volume
    7
  • Issue
    3
  • fYear
    2007
  • Firstpage
    462
  • Lastpage
    467
  • Abstract
    This paper provides a new understanding of metal-insulator-metal-capacitor-degradation behavior under a wide range of constant-current-stress conditions. It was found that capacitance degrades with stress, but the behavior of the degradation strongly depends on the stress-current density. At high stress levels, the capacitance increases logarithmically as the injection charge increases until dielectric breakdown occurs. At lower stress conditions, the degradation rate is proportional to the stress current and reverses after a certain period of time. A metal-insulator interlayer is observed using cross-sectional transmission-electron-microscopy micrographs, which possibly explains this reversal phenomenon.
  • Keywords
    MIM devices; electric breakdown; transmission electron microscopy; MIM; constant-current stress; cross-sectional transmission-electron-microscopy micrograph; dielectric breakdown; metal-insulator-metal capacitor degradation; CCS; Capacitance; MIM; capacitance; constant-current stress (CCS); interface; metal–insulator–metal (MIM);
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2007.907406
  • Filename
    4358689