DocumentCode
943289
Title
An Innovative Understanding of Metal–Insulator–Metal (MIM)-Capacitor Degradation Under Constant-Current Stress
Author
Hung, Chi-Chao ; Oates, Anthony S. ; Lin, Horng-Chih ; Chang, Yu-En Percy ; Wang, Jia-Lian ; Huang, Cheng-Chung ; Yau, You-Wen
Author_Institution
Taiwan Semicond. Manuf. Co. Ltd., Hsinchu
Volume
7
Issue
3
fYear
2007
Firstpage
462
Lastpage
467
Abstract
This paper provides a new understanding of metal-insulator-metal-capacitor-degradation behavior under a wide range of constant-current-stress conditions. It was found that capacitance degrades with stress, but the behavior of the degradation strongly depends on the stress-current density. At high stress levels, the capacitance increases logarithmically as the injection charge increases until dielectric breakdown occurs. At lower stress conditions, the degradation rate is proportional to the stress current and reverses after a certain period of time. A metal-insulator interlayer is observed using cross-sectional transmission-electron-microscopy micrographs, which possibly explains this reversal phenomenon.
Keywords
MIM devices; electric breakdown; transmission electron microscopy; MIM; constant-current stress; cross-sectional transmission-electron-microscopy micrograph; dielectric breakdown; metal-insulator-metal capacitor degradation; CCS; Capacitance; MIM; capacitance; constant-current stress (CCS); interface; metal–insulator–metal (MIM);
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2007.907406
Filename
4358689
Link To Document