DocumentCode :
943289
Title :
An Innovative Understanding of Metal–Insulator–Metal (MIM)-Capacitor Degradation Under Constant-Current Stress
Author :
Hung, Chi-Chao ; Oates, Anthony S. ; Lin, Horng-Chih ; Chang, Yu-En Percy ; Wang, Jia-Lian ; Huang, Cheng-Chung ; Yau, You-Wen
Author_Institution :
Taiwan Semicond. Manuf. Co. Ltd., Hsinchu
Volume :
7
Issue :
3
fYear :
2007
Firstpage :
462
Lastpage :
467
Abstract :
This paper provides a new understanding of metal-insulator-metal-capacitor-degradation behavior under a wide range of constant-current-stress conditions. It was found that capacitance degrades with stress, but the behavior of the degradation strongly depends on the stress-current density. At high stress levels, the capacitance increases logarithmically as the injection charge increases until dielectric breakdown occurs. At lower stress conditions, the degradation rate is proportional to the stress current and reverses after a certain period of time. A metal-insulator interlayer is observed using cross-sectional transmission-electron-microscopy micrographs, which possibly explains this reversal phenomenon.
Keywords :
MIM devices; electric breakdown; transmission electron microscopy; MIM; constant-current stress; cross-sectional transmission-electron-microscopy micrograph; dielectric breakdown; metal-insulator-metal capacitor degradation; CCS; Capacitance; MIM; capacitance; constant-current stress (CCS); interface; metal–insulator–metal (MIM);
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2007.907406
Filename :
4358689
Link To Document :
بازگشت