Title :
Output conductance of bipolar transistors with large neutral-base recombination current
Author :
McGregor, Joel M. ; Roulston, David J. ; Noël, J.P. ; Houghton, D.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fDate :
11/1/1992 12:00:00 AM
Abstract :
Neutral base recombination current, which is negligible in most modern bipolar transistors, can affect the common-emitter output conductance quite dramatically if it dominates other sources of base current. Mathematical theory for this phenomenon is developed, applied to some simplified special cases, and compared with numerical simulation. The large output conductance of some real Si/Si1-xGex DHBTs is seen to be the result of a large neutral base recombination current
Keywords :
Ge-Si alloys; electron-hole recombination; heterojunction bipolar transistors; semiconductor device models; DHBTs; Si-Si1-xGex; bipolar transistors; common-emitter output conductance; neutral-base recombination current; numerical simulation; Bipolar transistors; Capacitance; Councils; Current density; Electrons; Laboratories; Numerical simulation; Radiative recombination; Spontaneous emission; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
