• DocumentCode
    943603
  • Title

    Current-kink noise of n-channel enhancement e.s.f.i.-m.o.s. s.o.s. transistors

  • Author

    Fichtner, W. ; Hochmair, E.

  • Author_Institution
    Technische Universitÿt Wien, Institut fÿr Physikalische Elektronik, Wien, Austria
  • Volume
    13
  • Issue
    22
  • fYear
    1977
  • Firstpage
    675
  • Lastpage
    676
  • Abstract
    An experimental study of the low-frequency-noise properties of n-channel epitaxial silicon films on insulator m.o.s. s.o.s. transistors has been performed. The measurements show an excessive noise contribution at drain voltages corresponding to the current-kink effect for temperatures ranging from 4.2 to 300 K.
  • Keywords
    electron device noise; insulated gate field effect transistors; 4.2 to 300K; ESFI MOS SOS transistors; current kink noise; epitaxial Si film on insulator; low frequency noise; n-channel enhancement;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770479
  • Filename
    4240624
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=943603