Title :
The relationship of holding points and a general solution for CMOS latchup
Author :
Sleeter, David J. ; Enlow, Edward W.
Author_Institution :
Mission Research Corp., Albuquerque, NM, USA
fDate :
11/1/1992 12:00:00 AM
Abstract :
The holding point for CMOS latchup has been studied empirically and analytically using a semiconductor device physics code. A relationship between holding current and voltage has been identified that shows variations in doping, layout, epitaxy, and temperature produce different holding points that all fall on the same I- V curve. Analysis of the fields and carrier densities within negative resistance has provided new insight into the latchup response. A general solution for voltage as a function of current, valid at all points above switching, has been derived based on fields and carriers. The solution explains the relationship of holding points observed in empirical data
Keywords :
CMOS integrated circuits; CMOS latchup; I-V curve; carrier densities; doping; empirical data; epitaxy; general solution; holding current; holding points; latchup response; layout; negative resistance; semiconductor device physics code; temperature; Circuits; Design optimization; Doping; Epitaxial growth; Geometry; Latches; Physics; Semiconductor device modeling; Switches; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
