Title :
Interdiffusion effects of heat treatment on GaxIn1-xSb diodes metallised with gold
Author :
Peransin, J.M. ; Groubert, E.
Author_Institution :
Université des Sciences et Techniques du Languedoc, Centre d´Ã©tudes d´Ã©lectronique des Solides, Montpellier, France
Abstract :
A thick gold deposition has been used for metallic contact to GaxIn1-xSb. On a diode arrangement, the interdiffusion of these elements has been studied with heat treatment at 200°C. Only Ga and In diffuse out of the initial interface into the gold top layer, where they form stable compounds. The depth distribution profiles show that the microalloying takes the form of a layered structure of fixed intermetallic phases.
Keywords :
III-V semiconductors; diffusion in solids; gallium compounds; indium compounds; metallisation; semiconductor diodes; semiconductor-metal boundaries; GaxIn1-xSb diodes; depth distribution profiles; fixed intermetallic phases; heat treatment; layered structure; metallic contact; microalloying; thick gold deposition;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770504
