• DocumentCode
    943851
  • Title

    Interdiffusion effects of heat treatment on GaxIn1-xSb diodes metallised with gold

  • Author

    Peransin, J.M. ; Groubert, E.

  • Author_Institution
    Université des Sciences et Techniques du Languedoc, Centre d´Ã©tudes d´Ã©lectronique des Solides, Montpellier, France
  • Volume
    13
  • Issue
    24
  • fYear
    1977
  • Firstpage
    715
  • Lastpage
    716
  • Abstract
    A thick gold deposition has been used for metallic contact to GaxIn1-xSb. On a diode arrangement, the interdiffusion of these elements has been studied with heat treatment at 200°C. Only Ga and In diffuse out of the initial interface into the gold top layer, where they form stable compounds. The depth distribution profiles show that the microalloying takes the form of a layered structure of fixed intermetallic phases.
  • Keywords
    III-V semiconductors; diffusion in solids; gallium compounds; indium compounds; metallisation; semiconductor diodes; semiconductor-metal boundaries; GaxIn1-xSb diodes; depth distribution profiles; fixed intermetallic phases; heat treatment; layered structure; metallic contact; microalloying; thick gold deposition;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770504
  • Filename
    4240651
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=943851