Title :
Nonvolatile memory effects of Ag-Ag photodoped amorphous As2S3-Mo diode
Author :
Hirose, Yooichi ; Hirose, Haruo
Author_Institution :
Nippon Institute of Technology, Minami-Saitama, Saitama, Japan
fDate :
3/1/1976 12:00:00 AM
Abstract :
Better reversible switching and memory effects of a chalcogenide glass diode were observed in connection with the polarity-dependent threshold voltages. Thermal effects seem to be avoided in the functional process. A good reproducibility, realized by simple evaporations, will make a high packing density possible.
Keywords :
Amorphous materials; Amorphous semiconductors; Apertures; Electrodes; Microwave theory and techniques; Nonvolatile memory; Semiconductor diodes; Silver; Switches; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1976.10129
