Title :
Determination of GaAs m.e.s.f.e.t. equivalent-circuit parameters from I/V and 1 MHz measurements
Author :
Borrego, J.M. ; Gutmann, R.J. ; Chudzicki, M. ; Moghe, S.
Author_Institution :
Rensselaer Polytechnic Institute, Electrical & Systems Engineering Department, Troy, USA
Abstract :
A measurement technique is described for determining the equivalent-circuit parameters of microwave GaAs m.e.s.f.e.t.s from d.c, 1 MHz capacitance and 1 MHz voltage-gain measurements. The equivalent-circuit parameters of a commercially available 1 ¿m-gate-length GaAs m.e.s.f.e.t. determined with this technique are compared with parameters derived from scattering-parameter measurements made at 2 to 4 GHz.
Keywords :
Schottky gate field effect transistors; equivalent circuits; network parameters; 1 MHz measurements; GaAs MESFET; IV measurements; equivalent circuit parameters;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770533
