Title :
Electrical profiles from zinc implanted GaAs
Author :
Kular, S.S. ; Sealy, B.J. ; Stephens, K.G.
Author_Institution :
University of Surrey, Department of Electrical & Electronic Engineering, Guildford, UK
Abstract :
Hole concentration and mobility profiles have been measured for 1015Zn+/cm2 implanted into GaAs at room temperature. After annealing at 800°C the peak hole concentration for a 60 keV implant was in excess of 1019 holes/cm3 and decreased with increasing energy up to 450 KeV.
Keywords :
III-V semiconductors; carrier density; carrier mobility; gallium arsenide; ion implantation; zinc; GaAs; Zn implanted; annealing; hole concentration; mobility profiles; room temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780002
