DocumentCode :
944431
Title :
A unified model of carrier diffusion and sampling aperture effects on MTF in solid-state image sensors
Author :
Stevens, Eric G.
Author_Institution :
Eastman Kodak Co., Rochester, NY, USA
Volume :
39
Issue :
11
fYear :
1992
fDate :
11/1/1992 12:00:00 AM
Firstpage :
2621
Lastpage :
2623
Abstract :
A unified model is used for calculating the modulation-transfer function (MTF) of a front-side-illuminated, solid-state image sensor including the effects of lateral diffusion of charge carriers within the substrate and less than full pixel sampling apertures. Moreover, it is found that, in general, these two effects cannot be treated independently and then combined, using the convolution theorem to arrive at the total sensor MTF as has often been done in the past. It is found that the actual MTF is higher than predicted by simply multiplying the diffusion and aperture MTFs together. This discrepancy is seen to increase as pixel-to-pixel crosstalk increases for a given aperture size due to an increase in diffusion length, a decrease in depletion depth, or a decrease in the substrate´s absorption (coefficient) and/or as the pixel´s aperture decreases with respect to the pixel size
Keywords :
crosstalk; diffusion in solids; image sensors; optical transfer function; semiconductor device models; MTF; carrier diffusion; charge carriers; depletion depth; front-side-illuminated; lateral diffusion; modulation-transfer function; pixel sampling apertures; pixel-to-pixel crosstalk; sampling aperture effects; solid-state image sensors; substrate; unified model; Apertures; Charge carriers; Convolution; Crosstalk; Image sampling; Image sensors; Pixel; Sampling methods; Solid modeling; Solid state circuits;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.163473
Filename :
163473
Link To Document :
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