Title :
GaAs varactor diodes for u.h.f. TV tuners fabricated by ion implantation
Author :
Niikura, Ikuo ; Toyoda, Nobuyuki ; Shimura, Yasuo ; Yokoyama, Sakae ; Mihara, Minoru ; Hayashi, Takeshi ; Hara, Tohru
Author_Institution :
Matsushita Research Institute Tokyo Inc., Kawasaki, Japan
Abstract :
Gallium-arsenide varactor diodes have been developed by using ion implantation techniques. Diode series resistance is around 0.25 ¿ and uniform among diodes. The standard deviation of resistance distribution is 11.6%. Capacitance variation ratio, C3/C25, is about 5.7.
Keywords :
ion implantation; television receivers; tuning; varactors; GaAs varactor diodes; UHF TV tuners; capacitance variation ratio; ion implantation; series resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780007
