Title :
Double carrier injection in the sidegating effect in GaAs MESFETs
Author :
Shulman, Dima D. ; Young, Lawrence
Author_Institution :
Dept. of Electr. Eng., British Columbia Univ., Vancouver, BC, Canada
fDate :
11/1/1992 12:00:00 AM
Abstract :
Double injection into the semi-insulating substrate was investigated as a mechanism of sidegating in GaAs MESFETs. A change of gate current with sidegate voltage and a correlation between abrupt variations in drain, gate, and sidegate currents and instabilities in test devices support a physical model in which a gradual decrease of drain current with a nonlinear potential profile across the substrate is caused by low-level double injection and an abrupt decrease of drain current is caused by high-level double injection
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; GaAs; MESFETs; carrier injection; double injection; drain current; gate current; high level injection; instabilities; low level injection; nonlinear potential profile; physical model; semi-insulating substrate; semiinsulating substrate; sidegate voltage; sidegating effect; Apertures; Crosstalk; Electron devices; Frequency; Gallium arsenide; MESFETs; Optical arrays; Optical imaging; Silicon; Transfer functions;
Journal_Title :
Electron Devices, IEEE Transactions on
