• DocumentCode
    944558
  • Title

    A new fabricating method of planar Gunn-effect devices and integrated circuits

  • Author

    Wada, O. ; Yanagisawa, S. ; Takanashi, H.

  • Author_Institution
    Fujitsu Laboratories Ltd., Kawasaki, Japan
  • Volume
    64
  • Issue
    4
  • fYear
    1976
  • fDate
    4/1/1976 12:00:00 AM
  • Firstpage
    566
  • Lastpage
    568
  • Abstract
    A new method for the fabrication of Schottky gate planar Gunn-effect devices and circuits has been developed, whereby gate contacts with small geometrical dimensions and improved electrical characteristics are produced. This method is carried out simply and with a high yield. A monolithic integration of these devices has been demonstrated.
  • Keywords
    Bipolar transistors; Circuits; Contacts; Diodes; Electric variables; Etching; Fabrication; Low voltage; Oscillators; Schottky barriers;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1976.10168
  • Filename
    1454437
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=944558