Title :
A new fabricating method of planar Gunn-effect devices and integrated circuits
Author :
Wada, O. ; Yanagisawa, S. ; Takanashi, H.
Author_Institution :
Fujitsu Laboratories Ltd., Kawasaki, Japan
fDate :
4/1/1976 12:00:00 AM
Abstract :
A new method for the fabrication of Schottky gate planar Gunn-effect devices and circuits has been developed, whereby gate contacts with small geometrical dimensions and improved electrical characteristics are produced. This method is carried out simply and with a high yield. A monolithic integration of these devices has been demonstrated.
Keywords :
Bipolar transistors; Circuits; Contacts; Diodes; Electric variables; Etching; Fabrication; Low voltage; Oscillators; Schottky barriers;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1976.10168
