Title :
Medium power 12--18 GHz amplifier module
Author_Institution :
Watkins-Johnson Company, Palo Alto, USA
Abstract :
Broadband Ku-band amplification has been extended into the range of medium power levels. A single-ended 100 mW amplifier stage has been developed for the 12--18 GHz frequency band using a GaAs Schottky-barrier field-effect transistor. Minimum gain at 20 dBm of output power was 4dB. When operating in the driver mode, a minimum gain of 5dB at an output power of 15 dBm was measured across Ku-band. Higher gains can easily be achieved by cascading several of these amplifier stages. Gain, output power and impedance characteristics as a function of frequency are discussed.
Keywords :
Schottky gate field effect transistors; field effect transistor circuits; microwave amplifiers; solid-state microwave circuits; 100 mW amplifier stage; GaAs; Ku band amplifier; Schottky-barrier FETs; impedance characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780021
