Title :
An improved analytical model for short-channel MOSFETs
Author :
Chow, Hwang-Chemg ; Feng, Wu-Shiung
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
11/1/1992 12:00:00 AM
Abstract :
An analytical model for short-channel MOSFETs including all second-order effects is proposed with a significant improvement on the saturation region operation. This model requires no numerical iterations and describes channel-length modulations of submicrometer MOS devices more accurately than other existing models. In addition, the influence of both the source-drain resistance and short-channel effects on the lateral channel electric field is also investigated
Keywords :
insulated gate field effect transistors; semiconductor device models; analytical model; channel-length modulations; lateral channel electric field; saturation region operation; second-order effects; short-channel MOSFETs; source-drain resistance; submicron MOS devices; Analytical models; Circuits; Electron devices; Gallium arsenide; MESFETs; MOSFETs; Physics; Schottky diodes; Semiconductor diodes; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
