Title :
InP--SiO2 m.i.s. structure with reduced interface state density near conduction band
Author :
Fritzsche, Daniel
Author_Institution :
Deutsche Bundespost, Forschungsinstitut, Darmstadt, West Germany
Abstract :
HCl addition to the SiO2 c.v.d. process was found to be an efficient method for producing n--InP m.i.s. structures with low density of interface states near conduction band. Remaining deep interface donor states approximately 0.5 eV below conduction band restrict the steady-state bias range in h.f. applications.
Keywords :
III-V semiconductors; indium compounds; interface electron states; metal-insulator-semiconductor structures; semiconductor-insulator boundaries; CVD process; InP--SiO2; MIS structure; conduction band; donor states; interface state density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780037
