• DocumentCode
    944759
  • Title

    InP--SiO2 m.i.s. structure with reduced interface state density near conduction band

  • Author

    Fritzsche, Daniel

  • Author_Institution
    Deutsche Bundespost, Forschungsinstitut, Darmstadt, West Germany
  • Volume
    14
  • Issue
    3
  • fYear
    1978
  • Firstpage
    51
  • Lastpage
    52
  • Abstract
    HCl addition to the SiO2 c.v.d. process was found to be an efficient method for producing n--InP m.i.s. structures with low density of interface states near conduction band. Remaining deep interface donor states approximately 0.5 eV below conduction band restrict the steady-state bias range in h.f. applications.
  • Keywords
    III-V semiconductors; indium compounds; interface electron states; metal-insulator-semiconductor structures; semiconductor-insulator boundaries; CVD process; InP--SiO2; MIS structure; conduction band; donor states; interface state density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780037
  • Filename
    4240771
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=944759