Title :
A small-signal equivalent circuit for the collector-up InGaAs/InAlAs/InP heterojunction bipolar transistor
Author :
Meskoob, Bahman ; Prasad, Sheila ; Vai, Mankuan ; Fonstad, Clifton G. ; Vlcek, James C. ; Sato, Hiroya ; Bulutay, Ceyhun
Author_Institution :
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
fDate :
11/1/1992 12:00:00 AM
Abstract :
A small-signal equivalent circuit is developed for the InGaAs/InAlAs/InP collector-up heterojunction bipolar transistor (HBT). Device S-parameters are measured in the 0.05- GHz to 40-GHz range at several bias points and used in the modeling. Parameter values are optimized for the equivalent circuit using two methods: (1) the commercial circuit analysis program Touchstone; and (2) the simulated annealing algorithm. The measured and modeled S-parameters show excellent agreement. The current gain and the maximum stable gain/maximum available gain also show very good agreement between measured and modeled values, demonstrating the validity of the model. Consistent results were obtained by two independent methods further supporting the conclusions
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; circuit analysis computing; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; simulated annealing; 0.5 to 40 GHz; InGaAs-InAlAs-InP; S-parameters; Touchstone; circuit analysis program; collector-up HBT; current gain; heterojunction bipolar transistor; maximum available gain; maximum stable gain; modeling; simulated annealing algorithm; small-signal equivalent circuit; Analytical models; Circuit analysis; Circuit simulation; Equivalent circuits; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Optimization methods; Scattering parameters;
Journal_Title :
Electron Devices, IEEE Transactions on
