DocumentCode :
944837
Title :
Photoconduction in Germanium and Silicon
Author :
Schultz, M.L. ; Morton, G.A.
Author_Institution :
RCA Laboratories, Princeton, N.J.
Volume :
43
Issue :
12
fYear :
1955
Firstpage :
1819
Lastpage :
1828
Abstract :
Germanium and silicon are probably the two best known of all of the semiconductors. Their electronic properties have been studied in great detail both theoretically and experimentally. The reason for this is that these two materials are of such great practical importance for transistors and rectifiers. Perhaps less generally appreciated is the fact that both of these materials are excellent photoconductors. Their intrinsic response extends through the entire visible spectrum into the near infrared. When doped with appropriate foreign atoms and operated at low temperatures, these materials are very effective impurity photoconductors with response extending into the far infrared portions of the spectrum.
Keywords :
Charge carrier processes; Conductivity; Electron emission; Electron mobility; Energy states; Germanium; Photoconducting materials; Photoconductivity; Semiconductor materials; Silicon;
fLanguage :
English
Journal_Title :
Proceedings of the IRE
Publisher :
ieee
ISSN :
0096-8390
Type :
jour
DOI :
10.1109/JRPROC.1955.278044
Filename :
4055361
Link To Document :
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