Title :
Use of current controlled GaAs l.p.e. for optimum doping profiles in l.s.a. diodes
Author :
Lawrence, D.J. ; Eastman, L.F.
Author_Institution :
Cornell University, School of Electrical Engineering, Ithaca, USA
Abstract :
Microwave device quality GaAs, grown by the electric current-controlled liquid-phase epitaxy method, is reported. Ratios of peak current to valley current near the theoretical limit for the corresponding layer doping and thickness are reported, along with high breakdown voltages in unloaded l.s.a. oscillators.
Keywords :
Gunn diodes; doping profiles; gallium arsenide; limited space charge accumulation; liquid phase epitaxial growth; microwave oscillators; semiconductor growth; LSA diode; electric current controlled LPE; high breakdown voltages; layer doping; microwave device quality GaAs; optimum doping profiles; peak current/valley current ratios;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780052
