Title :
Pulsed laser annealing of zinc implanted GaAs
Author :
Kular, S.S. ; Sealy, B.J. ; Stephens, K.G. ; Chick, D.R. ; Davis, Q.V. ; Edwards, John
Author_Institution :
University of Surrey, Department of Electronic and Electrical Engineering, Guildford, UK
Abstract :
Samples of n type GaAs implanted with 1015Zn+/cm2 at room temperature were irradiated with a ruby laser of pulse length 0.8 ms. For samples coated with Si3N4 a laser energy of 1.5¿2.5 J/cm2 produced electrical activity of 40¿50% of the implanted dose. Peak hole concentrations up to about 7 × 1019 cm¿3 were measured. Uncoated samples irradiated with similar laser energies were not electrically active.
Keywords :
III-V semiconductors; annealing; carrier density; carrier mobility; gallium arsenide; ion implantation; laser beam applications; semiconductor technology; zinc; 0.8 ms laser pulses; 1015 Zn+/cm2 doping; Si3N4 coated GaAs; Si3N4 effects; Zn implanted GaAs; electrical activity; hole concentrations; ion implanted GaAs; pumped laser annealing; ruby laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780058
