Title :
Investigation into the survival of epitaxial bipolar transistors in current mode second breakdown
Author :
Dow, M. ; Nuttall, K.I.
Author_Institution :
University of Liverpool, Department of Electrical Engineering and Electronics, Liverpool, UK
Abstract :
Measurements have been obtained of the time for which epitaxial transistors are able to survive when pulsed into the current mode second breakdown condition. The results have been analysed to provide information on the nature of the constricted current distribution. The work indicates the effects that emitter geometry has on the extent of the current constriction.
Keywords :
bipolar transistors; current distribution; constricted current distribution; current mode second breakdown; emitter geometry; epitaxial bipolar transistors; survival time; transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780067
