Title :
A New High Temperature Silicon Diode
Author :
Thornton, C.G. ; Hanley, L.D.
Author_Institution :
Sylvania Elec. Prods., Inc., Elec. Div., Ipswich, Mass.
Abstract :
A method of preparing high back voltage silicon by bombarding the surface with oxygen has been devised and a new type of point contact diode prepared. The diode is characterized by: (1) very low saturation currents of the order of 1 microampere, (2) high inverse operating voltages (70-200v), (3) very low barrier capacitance (<0.3 ¿¿f) and rapid recovery times, and (4) operation at elevated temperatures up to 200 degrees C.
Keywords :
Capacitance; Conductivity; Diodes; Germanium; Helium; Rectifiers; Silicon; Temperature; Vacuum systems; Voltage;
Journal_Title :
Proceedings of the IRE
DOI :
10.1109/JRPROC.1955.278077
