Title :
Low leakage nearly ideal Schottky barriers to n-InP
Author :
Wada, O. ; Majerfeld, A.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
Au Schottky barriers incorporating an interfacial native oxide have been formed on n type InP. Depending on oxide thickness and annealing conditions these devices exhibit high barrier heights, ¿B > 0.75 eV, ideality factors n as low as 1.04 and very low saturation current densities <~ 10¿7 Acm¿2.
Keywords :
III-V semiconductors; Schottky effect; indium compounds; Schottky barriers; annealing conditions; high barrier heights; interfacial native oxide; n type InP; n-InP Schottky barriers; oxide thickness;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780084
