Title :
Boron segregation data for d.m.o.s. devices
Author :
Ladbrooke, P.H. ; Strudwick, M.N.
Author_Institution :
University of New South Wales, Department of Solid-State Electronics, Kensington, Australia
Abstract :
A simple formula is given for the extent of boron depletion from the surface channel region of a d.m.o.s. f.e.t. during fabrication.
Keywords :
doping profiles; insulated gate field effect transistors; semiconductor technology; B segregation data; DMOS FETs; surface channel region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780087
