Title :
Hydrogenation of polycrystalline silicon thin film transistors by plasma ion implantation
Author :
Bernstein, James D. ; Qin, Shu ; Chan, Chung ; King, Tsu-Jae
Author_Institution :
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
Abstract :
Both n- and p-channel polycrystalline silicon (poly-Si) thin film transistors (TFT´s) have been hydrogenated using the plasma ion implantation (PII) technique. Significant improvements in device characteristics have been obtained. Because PII is capable of greater dose rates than plasma immersion, it allows for significantly shorter process times than other methods investigated thus far.<>
Keywords :
electron traps; elemental semiconductors; hydrogen; ion implantation; silicon; thin film transistors; Si:H; device characteristics; dose rates; hydrogenation; plasma immersion; plasma ion implantation; polysilicon thin film transistors; process times; Hydrogen; Ion implantation; Plasma density; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Plasma properties; Plasma sheaths; Silicon; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
