Title :
New hot-carrier-degradation mode in thin-film SOI nMOSFET´s
Author :
Tsuchiya, Toshiaki ; Ohno, Terukazu
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
A new hot-carrier degradation mode peculiar to MOSFET´s fabricated on thin-film SOI is described. This degradation mode, which occurs in nMOSFET´s more easily than in pMOSFET´s, is due to suppression of parasitic bipolar action caused by recombination of excess carriers through hot-carrier-induced front interface-traps. Threshold voltage is significantly shifted by this phenomenon. The reliability lifetime defined by threshold voltage shift and drain current degradation is also discussed, considering the new degradation mode.<>
Keywords :
MOSFET; electron traps; hot carriers; interface states; semiconductor device reliability; silicon-on-insulator; thin film transistors; Si; drain current degradation; excess carriers recombination; hot-carrier-degradation mode; interface traps; n-channel MOSFET; parasitic bipolar action suppression; reliability lifetime; thin-film SOI nMOSFET; threshold voltage shift; CMOS technology; Charge carrier processes; Degradation; Hot carriers; MOSFET circuits; Scattering; Spontaneous emission; Stress; Threshold voltage; Transistors;
Journal_Title :
Electron Device Letters, IEEE
