Stress-voiding in tungsten-plug interconnect systems induced by high-temperature processing

We describe the sensitivity of sub-micron via integrity to high-temperature processing following via etch. It has been observed that thermal expansion of Al into the via hole, before tungsten deposition, may result in the fabrication of a deformed tungsten plug. Our results indicate that relaxation of the Al can give rise to stress-void formation under the tungsten plug. This may manifest itself either during electromigration stress or high-temperature storage. This mechanism represents a new reliability hazard for a tungsten-plug interconnect system.<>