Title :
Development of bottom-emitting 1300-nm vertical-cavity surface-emitting lasers
Author :
Louderback, D.A. ; Fish, M.A. ; Klem, J.F. ; Serkland, Darwin K. ; Choquette, K.D. ; Pickrell, G.W. ; Stone, R.V. ; Guilfoyle, P.S.
Author_Institution :
OptiComp Corp., Zephyr Cove, NV, USA
fDate :
4/1/2004 12:00:00 AM
Abstract :
We present experimental results on the development of bottom-emitting GaInNAs vertical-cavity surface-emitting lasers (VCSELs) operating at wavelengths near 1300 nm. This development effort is based on the modification of oxide-apertured top-emitting structures to allow emission through the GaAs substrate. Similar device performance was seen in both the top- and bottom-emitting structures. Single-mode output powers (adjusted for substrate absorption) of /spl sim/0.75 mW, with threshold currents of 1.3 mA, were achieved with /spl sim/3.5-μm aperture diameters. Larger multimode devices exhibited a maximum adjusted output power of 2.2 mW. To the best of our knowledge, these are the first bottom-emitting flip-chip compatible 1300-nm VCSELs fabricated with GaInNAs-GaAs active regions.
Keywords :
III-V semiconductors; flip-chip devices; gallium compounds; indium compounds; laser cavity resonators; laser modes; optical communication equipment; semiconductor device testing; semiconductor lasers; substrates; surface emitting lasers; 1300 nm; GaAs; GaInNAs-GaAs; bottom-emitting vertical-cavity surface-emitting lasers; device performance; flip-chip compatible VCSEL; multimode devices; optical communications; oxide-apertured top-emitting structures; single-mode output powers; substrate absorption; threshold currents; top-emitting structures; Absorption; Apertures; Distributed Bragg reflectors; Gallium arsenide; Optical surface waves; Power generation; Substrates; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.824614
