Title :
35-GHz intrinsic bandwidth for direct modulation in 1.3-μm semiconductor lasers subject to strong injection locking
Author :
Hwang, S.K. ; Liu, J.M. ; White, J.K.
Author_Institution :
Graduate Inst. of Opto-Mechatronics, Nat. Chung Cheng Univ., Taiwan, Taiwan
fDate :
4/1/2004 12:00:00 AM
Abstract :
Significant enhancement in modulation bandwidth of semiconductor lasers subject to strong optical injection is experimentally and theoretically studied. At least two folds of improvement is achieved under study. By using an optical probing method, a modulation bandwidth of 35 GHz that is free from electrical parasitic effects is observed in the injection-locked laser system. The achieved bandwidth approaches the maximum modulation bandwidth set by the K factor for the free-running laser. Discussions are presented for an even larger modulation bandwidth using the injection-locking technique.
Keywords :
electro-optical modulation; laser mode locking; optical communication; optical communication equipment; semiconductor lasers; 1.3 mum; 35 GHz; direct modulation; electrical parasitic effects; free-running laser; injection-locked laser system; intrinsic bandwidth; modulation bandwidth; optical communications; optical probing method; semiconductor lasers; strong injection locking; strong optical injection; Bandwidth; Frequency; High speed optical techniques; Injection-locked oscillators; Masers; Optical attenuators; Optical interferometry; Optical mixing; Optical modulation; Semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.824627
