DocumentCode
945660
Title
Some Aspects of the Design of Power Transistors
Author
Fletcher, N.H.
Author_Institution
Transistor Products, Inc., Waltham, Mass. (On leave from Division of Radiophysics, CSIRO, Sydney, Australia.)
Volume
43
Issue
5
fYear
1955
fDate
5/1/1955 12:00:00 AM
Firstpage
551
Lastpage
559
Abstract
This paper discusses some factors which have to be taken into account in the design of high power transistors. An effect of great importance is the reduction of emitter bias caused by transverse current flow in the base region. This effect is examined in some detail and the results of the discussion are applied to the design of improved transistor types. Finally, a short discussion of thermal stability and mechanical design is given.
Keywords
Australia; Charge carrier density; Current density; Electric shock; Fabrication; Frequency; Power transistors; Signal design; Thermal stability; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IRE
Publisher
ieee
ISSN
0096-8390
Type
jour
DOI
10.1109/JRPROC.1955.278099
Filename
4055455
Link To Document