DocumentCode :
945660
Title :
Some Aspects of the Design of Power Transistors
Author :
Fletcher, N.H.
Author_Institution :
Transistor Products, Inc., Waltham, Mass. (On leave from Division of Radiophysics, CSIRO, Sydney, Australia.)
Volume :
43
Issue :
5
fYear :
1955
fDate :
5/1/1955 12:00:00 AM
Firstpage :
551
Lastpage :
559
Abstract :
This paper discusses some factors which have to be taken into account in the design of high power transistors. An effect of great importance is the reduction of emitter bias caused by transverse current flow in the base region. This effect is examined in some detail and the results of the discussion are applied to the design of improved transistor types. Finally, a short discussion of thermal stability and mechanical design is given.
Keywords :
Australia; Charge carrier density; Current density; Electric shock; Fabrication; Frequency; Power transistors; Signal design; Thermal stability; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IRE
Publisher :
ieee
ISSN :
0096-8390
Type :
jour
DOI :
10.1109/JRPROC.1955.278099
Filename :
4055455
Link To Document :
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