• DocumentCode
    945660
  • Title

    Some Aspects of the Design of Power Transistors

  • Author

    Fletcher, N.H.

  • Author_Institution
    Transistor Products, Inc., Waltham, Mass. (On leave from Division of Radiophysics, CSIRO, Sydney, Australia.)
  • Volume
    43
  • Issue
    5
  • fYear
    1955
  • fDate
    5/1/1955 12:00:00 AM
  • Firstpage
    551
  • Lastpage
    559
  • Abstract
    This paper discusses some factors which have to be taken into account in the design of high power transistors. An effect of great importance is the reduction of emitter bias caused by transverse current flow in the base region. This effect is examined in some detail and the results of the discussion are applied to the design of improved transistor types. Finally, a short discussion of thermal stability and mechanical design is given.
  • Keywords
    Australia; Charge carrier density; Current density; Electric shock; Fabrication; Frequency; Power transistors; Signal design; Thermal stability; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1955.278099
  • Filename
    4055455