Title :
Large signal GaAs m.e.s.f.e.t. model and distortion analysis
Author :
Minasian, Robert A.
Author_Institution :
University of Melbourne, Department of Electrical Engineering, Parkville, Australia
Abstract :
A simple large signal model, derived from small signal measurements over a range of bias points, is presented for a 2 ¿m gate length GaAs m.e.s.f.e.t. Its accuracy is verified by comparing model-predicted second harmonic distortion via time domain and Volterra analyses, with measurements to input frequencies of 4.5 GHz.
Keywords :
Schottky gate field effect transistors; semiconductor device models; solid-state microwave devices; time-domain analysis; 4.5 GHz; GaAs MESFET; Volterra analyses; distortion analysis; large signal model; second harmonic distortion; time domain analysis;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780122
